| 摘要 |
With an increase of integration density in an integrated circuit, the channel length of MIS FET becomes shorter and shorter, which causes a hot carrier effect. To solve the problem, the doping profile of source/drain regions and doping amount must be precisely controlled such that a strong electric field is not generated in a transition region from channel to drain. To obtain this objective, the present invention discloses a method, in which reflowed sidewalls of doped silicate glass having a gentle slope are formed on both sides of a gate electrode, and the gate electrode and the sidewalls thus formed are used as a mask for ion implantation. The depth of ion implantation and the doping amount change gradually from the channel region to the drain region avoiding a generation of the strong electric field and thus alleviates the short channel trouble. The present invention has also an effect of obtaining a passivation layer having gentle slope on the surface and avoiding a broken wire trouble of aluminum wiring.
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