| 摘要 |
PURPOSE:To improve the characteristics of a semiconductor element by a method wherein a buffer layer is formed of hydrogen system gas in the initial boundary part of a film formed on an insulating film. CONSTITUTION:After a gate electrode 2 is formed on a substrate 1, an insulating film 3 is formed. Then, to form an I-type layer 5 on the insulating film 3, an a-Si:H buffer layer 4 of a 10-50 Angstrom thickness is formed of SiH4 first and successively the I-type layer 5 is formed of SiF4/H2. An ohmic contact layer 6 is formed on the I-type layer 5 and a source electrode 7a and a drain electrode 7b are formed on the contact layer 6. As the buffer layer 4 is provided between the insulating film 3 and the I-type layer 5, the insulating film 3 is protected from etching by fluorine radicals or fluoride which exist when the I-type layer 5 is formed and the deterioration of the insulating film 3 can be avoided. Moreover, the boundary between the insulating film 3 and the I-type layer 5 can be smoothened so that the characteristics of the films as a semiconductor element can be improved. |
