| 摘要 |
PURPOSE:To prevent leakage current from flowing between groove-shaped capacitors, by forming high-concentration impurity regions which have higher concentration than a semiconductor substrate and are of the same conductivity type as the substrate on a region just under an element separation region between the groove-shaped capacitors which are formed adjacent to the element isolation region being interposed therebetween. CONSTITUTION:When high-concentration impurity regions 21 and 22 are formed respectively on a region which is disposed between groove-shaped capacitors C11 and C12 and in which an interference leakage current easily flows, that is, just under an element isolation region 12, and on a region which is as deep as bottom parts of grooves 13 and 14 where the groove-shaped capacitors C11 and C12 are formed, the interference leakage current can be effectively prevented from flowing. In this example, profile peaks in impurity concentrations are formed just under the element isolation region 12 and on regions as deep as the bottom parts of the grooves 13 and 14 where the groove-shaped capacitors C11 and C12 are formed. However, since the leakage current flows in quantity just under the element isolation region 12, the profile peak in the impurity concentration is allowed to be disposed only just under the element isolation region 12 so that the leakage current can be sufficiently suppressed. |
