发明名称 |
AMORPHOUS PHOTOVOLTAIC DEVICE |
摘要 |
PURPOSE:To avoid warpage by providing an amorphous material film with a tensile stress between a substrate and a metal electrode film. CONSTITUTION:An amorphous material film 6 is provided between a substrate 5 and a metal electrode film 7. An amorphous silicon film is deposited by a glow discharge decomposition method on the substrate 5 with a thickness of 1mum as the amorphous material film 6. The conditions of forming the film are such that SiH4: 50 SCCM, a pressure: 100 Pa. a RF power: 50 W and a substrate temperature: 100 deg.C. In an amorphous photovoltaic device constituted like this, the two types of stresses are cancelled with each other on the substrate so that the warpage of the substrate can be avoided. |
申请公布号 |
JPS63161681(A) |
申请公布日期 |
1988.07.05 |
申请号 |
JP19860311372 |
申请日期 |
1986.12.25 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ARITA TAKASHI;OSAWA MICHIO;HANABUSA AKIRA;ONO MASAHARU;MORI KOSHIRO |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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