发明名称 |
Monolithic integrated semiconductor device of semiconductor laser and optical waveguide |
摘要 |
A semiconductor device which includes a semiconductor substrate, an active layer in a quantum well structure disposed on said semiconductor substrate, an optical waveguide formed by a disordering part of said active layer, and a clad layer disposed on said active layer and optical waveguide. As a result of this structure, the coupling efficiency of the active layer and optical waveguide is extremely enhanced, and a high performance semiconductor device is obtained.
|
申请公布号 |
US4755015(A) |
申请公布日期 |
1988.07.05 |
申请号 |
US19860884621 |
申请日期 |
1986.07.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UNO, TOMOAKI;OGURA, MOTOTSUGU |
分类号 |
H01S5/00;H01S5/026;H01S5/10;H01S5/12;H01S5/125;H01S5/20;H01S5/343;(IPC1-7):G02B6/10 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|