发明名称 Monolithic integrated semiconductor device of semiconductor laser and optical waveguide
摘要 A semiconductor device which includes a semiconductor substrate, an active layer in a quantum well structure disposed on said semiconductor substrate, an optical waveguide formed by a disordering part of said active layer, and a clad layer disposed on said active layer and optical waveguide. As a result of this structure, the coupling efficiency of the active layer and optical waveguide is extremely enhanced, and a high performance semiconductor device is obtained.
申请公布号 US4755015(A) 申请公布日期 1988.07.05
申请号 US19860884621 申请日期 1986.07.11
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 UNO, TOMOAKI;OGURA, MOTOTSUGU
分类号 H01S5/00;H01S5/026;H01S5/10;H01S5/12;H01S5/125;H01S5/20;H01S5/343;(IPC1-7):G02B6/10 主分类号 H01S5/00
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