| 摘要 |
PURPOSE:To relax the stress of a substrate interface, and to improve yield by changing film quality toward the surface from the substrate interface during the deposition of a film. CONSTITUTION:An ion implantation layer 2 is formed onto the surface of a GaAs semi-insulating substrate 1, and a PCVD-SiN film 3 is deposited onto the surface of the GaAs substrate. An ohmic electrode 4 and a gate electrode 5 for source-drain are shaped, thus completing a field-effect transistor FET. The quality of the insulating film 3 is changed to film thickness. Accordingly, the adhesion of the substrate and the insulating film is intensified, stress in the vicinity of the surface of the substrate is relaxed, no crack is generated, the uniformity of element characteristics in a wafer surface is improved, and the yield of a semiconductor device is enhanced.
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