| 摘要 |
PURPOSE:To enable uniform optical anisotropic etching to a sample by mounting a plasma generating means and a radical selective electrode on the outer periphery of a reaction treating region, transmitting beams from a light source through an upper cover consisting of a light-transmitting plate in a chamber and irradiating the sample with beams from the light source. CONSTITUTION:A plasma generating coil 3 and a radical selective electrode 4 are set up to the outer periphery of a reaction treating region 2b, and beams from a light source 1 are transmitted through only an upper cover 21 composed of a light-transmitting plate and a sample 6 is irradiated with beams from the light source 1. Beams can be made to collide vertically to the sample 6 through the upper cover 21 for a chamber 2, and the radicals of a treating gas pour on the sample 6 from the whole surface of the periphery of the reaction treating region 2b. Accordingly, uniform optical anisotropic etching can be conducted to the sample 6.
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