| 摘要 |
PURPOSE:To form an SRAM whose memory contents are not inverted and whose integration is not deteriorated even if a speed for reading out information becomes higher, by adding a reading-out circuit in a static type RAM (SRAM) cell. CONSTITUTION:IN order to read out information from an SRAM cell, a column line 16 is changed on a high level while a column line 7 being maintained on a low level. Resultingly, a MOSFET 14 is turned on and also a MOSFET 15 whose internal node 10 is stored on a high level is turned on, so that a voltage on a column line 11 is discharged through this current route. Therefore the information stored in the SRAM cell is read out by detecting the discharged current. A speed for reading out the information from the SRAM cell is improved by increasing a set-up current value on the current route. Because the internal node 10 is separated from an output terminal, memory information is not inverted even if current driving capacities in the MOSFETs 14 and 15 are improved. |
