| 摘要 |
<p>PURPOSE:To reduce the number of stacking faults in a diffusion layer formed in postprocesses and the dispersion of the diffusion layer at every wafer, and to improve and stabilize the quality of products by specifying the thickness of adhesion of boron glass onto the surface of a wafer. CONSTITUTION:The thickness of adhesion of boron glass onto the surface of wafers is brought to 1200-1800Angstrom . The coverage of boron glass is brought to approximately treble as large as conventional examples and the dispersion of the coverage of boron glass at every wafer is reduced, and the number of stacking faults is decreased to half or one third. when the coverage of boron glass is brought to 2000Angstrom or more, the coverage of boron glass is adjusted to 1800Angstrom or less because the dispersion of the sheet resistance rhos of a diffusion layer is increased (35-50OMEGA/m<2> and 35-40OMEGA/m<2> as a normal value).</p> |
