| 摘要 |
PURPOSE:To improve the dielectric strength of a gate insulating film composed of extra-thin films by inserting a semiconductor thin film between the gate insulating film and a gate electrode. CONSTITUTION:Five layers of PMMA polymer films are built up on a substrate between N-type layers 2 and 3 by an LB method to form a gate insulating film 4 of an approximately 10 Angstrom thickness. Five layers of phthalocyanine dielectric films are built up on the gate insulating film 4 by the LB method so as to have an approximately 30 Angstrom thickness as an organic semiconductor thin film 5. A gate electrode 6 is composed of an evaporated Au film of an approximately 1,000 Angstrom thickness. With this constitution, the pinning of a Fermi-level is eliminated and the normal operation of a MOS transistor can be provided. With the embodiment employing an SiO2 film of an approximately 20 Angstrom thickness as the gate insulating film 4 and polydiacetylene dielectric thin films are built up by the LB method so as to have an approximately 100 Angstrom thickness, the inversion in the surface of the GaAs substrate 1 can be realized and the normal operation of the MOS transistor can be provided. |
