| 摘要 |
PURPOSE:To manufacture a semiconductor device without sacrifying characteristics of both MOSFETs, by setting widths of low-concentration impurity regions in accordance with characteristics required for respective MOS field effect transistors FETs. CONSTITUTION:MOSFETs 12 and 13 are provided with low-concentration impurity regions 125 and 135 for improving hot carrier resisting characteristics. The regions are different from each other, in widths (w) in their horizontal direction (x). For example, assuming that the MOSFETs 12 and 13 for hot carrier resistance and for high breakdown, respectively, are made and both widths (w) are made w1 and w2, respectively, a relation w1<w2 is set for them. Since a width w1 of the low-concentration impurity layer 125 is set in accordance with a width of a resist mask, the width (w) can be freely set. Hence, a semiconductor device composed without sacrifying characteristics of both MOSFETs can be manufactured. |
