| 摘要 |
PURPOSE:To improve the etching ratio of a 3-layer mask to a substrate to be etched by patterning it by a 3-layer resist method using as a lower layer a polyvinylcarbazole resin film. CONSTITUTION:A polyvinylcarbazole resin film 12 is formed as a lower layer on an aluminum film 11 coated on a stepwise substrate 10. A silicon compound film 13 is then formed as an intermediate layer on the film 12, and a photosensitive novolac positive resist film 14 is further formed as an upper layer thereon. The film 14 is exposed with a far ultraviolet ray to be patterned, and with the film 14 pattern as a mask the films 13, 12 are sequentially patterned to form a mask pattern made of 3 layers. Further, with the 3-layer mask pattern as a mask a substrate to be etched is patterned. Thus, the etching ratio of the 3-layer mask to the substrate can be improved. |
