| 摘要 |
PURPOSE:To reduce the occupied floor area to a minimum by stacking more than one reaction chamber in the vertical direction. CONSTITUTION:A wafer 2 is put in a loading chamber 1; the inside of this chamber is evacuated to produce a vacuum. A gate valve 4 is opened; the wafer 2 is transferred to a first reaction chamber 3. The gate valve 4 is closed; a gas is introduced into the first reaction chamber 3; a voltage is applied to a part between an upper electrode 5 and a lower electrode 6; the wafer 2 is subjected to a first plasma etching process. After this process, the wafer 2 is transferred to a transfer part 8 situated just under the chamber through the gate valve situated just under the chamber, and is further transferred to a second reaction chamber 7 situated directly under the part. Inside the second reaction chamber 7, a second plasma etching reaction is executed in order to supplement the plasma etching reaction which has been executed inside the first reaction chamber 3. The wafer 2 which has been subjected to the plasma etching process inside this second reaction chamber 7 is transferred to an unloading chamber 9 through the gate valve 4 and is taken out.
|
