| 摘要 |
PURPOSE:To eliminate the deviation of patterns as well as to contrive improvement in reliability of the title semiconductor device by a method wherein, after interlayer insulating films of inorganic and organic substances have been formed continuously, an aperture is provided by selectively removing said films continuously, and the first and the second electrode layers are formed. CONSTITUTION:After an electrode layer 2 has been formed on a substrate 1, the inorganic substance 3 consisting of CVD, SiO2 and the like, and the organic substance 4 consisting of polyimide resin and the like are formed successively. The substance 4 on the aperture part is etched using a photoresist as a masking. Then, after the substance 3 has been etched using said photoresist and the substance 4 as a masking, the photoresist is removed. As a result, the aperture on the electrode layer can be formed in a highly precise manner, there is almost no under-etching, and the reliability of the title semiconductor device can be improved.
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