| 摘要 |
PURPOSE:To enhance the efficiency of removing ashing and to improve a working efficiency by providing a corona generator or a hydrogen plasma generator to activate oxidation-reduction reaction, and providing a preposition chamber to reduce the number of vacuum processes. CONSTITUTION:A wafer 10 necessary to remove a photoresist is introduced into a preposition chamber 2, which is then evacuated in vacunm, and predetermined number of wafers 10 are fed to a processing chamber 1. Then, the chamber 1 is evacuated in vacuum, oxygen gas or ozone is supplied from a supply hole 7, and ozone is generated by irradiating it with an ultraviolet ray. The photoresist is ashed by the ozone, and discharged from a discharge hole 8. Further, a corona generator 5 generates ozone near the wafer 10 to completely remove the remaining resist. Since the chamber 2 of vacuum state is provided, it is not necessary to evacuate in vacuum the chamber 1 each time the wafer 10 is inserted. Thus, the ashing removal can be enhanced in its efficiency, and its working efficiency can be enhanced. |
