| 摘要 |
A molten charge containing the constituents of a eutectic composition of a semiconductor material and a conductive material, for example silicon and TaSi2, in the proportions of the eutectic composition is prepared. A composite mass is pulled from the melt, and consists of a matrix (11) of single crystal semiconductor material having an array of individual rods (12) of the conductive material disposed therein. The rods (12) form Schottky barriers with the semiconductor material (11). A body (10) is cut from the composite mass. A semiconductor device, specifically an FET, is fabricated from the body (10) by making gate contact (20) to several of the rods (12) at one end, and source (30) and drain (31) contacts to the matrix (11) of semiconductor material. Current flow in the semiconductor material of the matrix (11) between the source (30) and the drain (31) is controlled by applying biasing potential to the gate contact (20) to enlarge the depletion zones around the rods. |
