| 摘要 |
PURPOSE:To eliminate the stepping between layers and to prevent the generation of a disconnection of wiring and a short-circuit by a method wherein a groove is formed on an insulating film when a multilayer wiring is provided, and a wiring is formed in the groove. CONSTITUTION:An insulating film 12 consisting of oxide or nitride film is grown on a semiconductor substrate 11. Then, a groove is formed by performing a dry or wet etching on the part of the insulating film 12 where a wiring pattern is required. A lower layer wiring metal is formed on the whole surface of a wafer by performing a sputtering operation. Besides, a lower layer wiring 13 only is left in the groove. Then, an insulating film 14 is formed, and an upper layer wiring metal 15 is grown thereon. Accordingly, the stepping generating by the thickness of the wiring can be prevented, and the disconnection of wire and a short circuit can also be prevented.
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