| 摘要 |
PURPOSE:To improve the light emitting efficiency by causing an InP layer which grows on an InGaAsP layer with an LPE technique to grow at a specified temperature; besides, by specifying a degree of oversaturation in an InP solution to be used for the InP layer. CONSTITUTION:A P-InP layer 2, an N-InP layer 3, the P-InP layer 4 make epitaxial growths on a P-type InP substrate 1 with an LPE technique. Then an SiO2 film 5 is formed by a CVD technique and an opening part 6 is prepared by using hydrofluoric acid. And a V-shaped groove 7 is formed by etching with the film 5 as a mask. When the groove is formed, the SiO2 film 5 is removed. Then the substrate 1 comes in contact with an InP solution and a P-InP clad layer 8 grows at the surface of the layer 4 and at a base of the groove 7 by the LPE technique and then the substrate 1 comes in contact with an InGaAsP solution to form a P-InGaAsP active layer 9 on the base of the groove 7. Eventually, the substrate 1 comes in contact with the InP solution to form an N-InP clad layer 10 at the groove part of an upper part of the active layer 9 and on the clad layer 8. In such a case, the InP solution shall be at a temp. of 595 deg.C or less and a degree of oversaturation of P in the InP solution shall be at the temp. of 14 deg.C. In this way, the operation is simplified and the light emitting efficiency is improved. |
