| 摘要 |
PURPOSE:To accurately align a mask even when a metal film is flat by a method wherein a resist film having a pattern to expose a marked part for alignment is coated on the metal film, the metal film at the marked part is removed, an insulating film is exposed and the resist film is removed so that the mask can be aligned by using a laser beam by referring to the exposed insulating film. CONSTITUTION:An insulating film 2 of silicon dioxide is formed on a silicon semiconductor substrate 1; a metal film 3 of aluminum is coated on the film. A photoresist layer 4 is coated on this metal film 3; a photomask is placed on the photoresist layer 4 in such a way that the light is shut out only at a marked part 5 for alignment use. Then, the light is radiated, and an unexposed part is removed by a development process. The resist layer at the marked part 5 for alignment use is removed; the metal film 3 is etched by phosphoric acid by making use of a light-hardened resist film 6 as a mask; the resist film 6 is removed. A mask having a wiring pattern is aligned by using a laser beam by referring to the exposed insulating film 2. |
