| 摘要 |
PURPOSE:To form a thin having a stable crystal structure on a substrate by repeating the sputtering of a target with ion beams and the bombardment of a film formed on the substrate with ion beams with a period of a short time. CONSTITUTION:A substrate 5 to be treated is set on a substrate holder 12 which is rotated by a motor 11 on one side of a sputtering chamber 10 and an ion source 13 for projecting ion beams 14 of Ar and H ions is placed opposite to the substrate 5. Deflecting plates 16 and a graphite target 15 are arranged so that the ion beams 14 are deflected and collided against the target 15 when voltage is impressed to the plates 16. The chamber 10 is evacuated and gaseous Ar and H2 are introduced into the ion source 13 to project ion beams 14. During the projection, voltage is intermittently impressed to the plates 16 with a period of a short time to repeat to repeat the sputtering of the target 15 and the resputtering of a film formed on the substrate 5. Thus, sputtering and activation are simultaneously carried out and a film can be formed with high reproducibility with such a simple device.
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