发明名称 SURFACE-PROTECTIVE STRUCTURE FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate a part of an adhesive and a protective film after removal of a protective sheet by installing a buffer layer between the adhesive and the protective sheet. CONSTITUTION:A buffer layer 4 is installed between an adhesive 3 and a protective sheet 5. Thanks to this layer, the force which is exerted to a silicon substrate 1 by a grinder 7 is absorbed by the buffer layer 4 between the protective sheet and the adhesive 3; the adhesive 3 does not adhere excessively to a protective film 2; as a result, the adhesive 3 is not deteriorated or hardened. Accordingly, when the protective sheet 5 is stripped together with the buffer layer 4 after completion of a grinding process of the reverse face, a residual substance of the adhesive does not remain on the protective film 2; it is possible to completely remove the protective layer from the semiconductor substrate 1 if the protective film 2 is removed by an ashing process using a gas of oxygen or the like.
申请公布号 JPS63160338(A) 申请公布日期 1988.07.04
申请号 JP19860309824 申请日期 1986.12.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAMAKI REIJI;TAKAGI HIROSHI;HARADA SHIGERU;IKEGAMI MASAAKI;OBATA MASANORI;ARAI HAJIME
分类号 H01L21/304;B24B7/07;H01L21/31 主分类号 H01L21/304
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