发明名称 SUBMOUNT FOR OPTICAL SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To maintain the product quality at a desired level with stability by a method wherein a Ti-Ni-Au barrier layer is provided on both sides of an Si submount and the barrier is covered by a solder layer. CONSTITUTION:On both sides of an Si conductive submount 2, a 500Angstrom -thick Ti first layer 31, a 1500Angstrom -thick Ni second layer 32, and a 500Angstrom -thick Au third layer 33, are formed by spattering, for the construction of a barrier layer 3. The entire surface of the barrier layer 3 is covered by an Sn solder coating. With the layers 31 and 32 in the buffer layer 3 preventing the spread of Si over the surface, there will be no Si oxide formed on the surface. This dispenses with a washing in an inorganic solvent during the packaging process and a product of this design may be stored in the ambient atmosphere. This design keeps stable the quality of products in storage.
申请公布号 JPS63160292(A) 申请公布日期 1988.07.04
申请号 JP19860315617 申请日期 1986.12.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHII MITSUO;TSUMURA KIYOAKI
分类号 H01L33/12;H01L33/14;H01L33/30;H01L33/62;H01S5/00 主分类号 H01L33/12
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