| 摘要 |
PURPOSE:To enhance the accuracy of a fine pattern by patterning it by a 3-layer resist method using a polystyrene film as a lower layer to improve the dry etching resistance of a 3-layer mask. CONSTITUTION:A polystyrene film 12 is formed as a lower layer on an aluminum silicon alloy film 11 coated on a substrate 10. Then, a silicon compound film 13 is formed as an intermediate layer, and a photosensitive novolac resist film 14 is formed as an upper layer thereon. The film 14 is exposed with a far ultraviolet ray to be patterned, and with the film 14 pattern as a mask the films 13, 12 are sequentially patterned to form a 3-layer mask pattern. Then, with the 3-layer mask pattern as a mask a substrate to be etched is patterned. Thus, the dry etching resistance of the 3-layer mask is improved to form an accurate fine pattern. |
