发明名称 MANUFACTURE OF SURFACE ACOUSTIC WAVE DEVICE
摘要 PURPOSE:To attain minute adjustment of the frequency by forming an electrode onto a substrate major plane made of Li2B4O7, melting a part exposed of the substrate on the substrate major plane so as to change the apparent layer thickness of the substrate. CONSTITUTION:Pure water is sprayed onto a face formed with an electrode pattern 1 in a wafer made of Li2B4O7 formed with the electrode 1 by the lift-off method. Then the pure water forms a groove 3 formed by melting the major plane of the wafer 2 not formed with the electrode pattern 1 by using the electrode pattern 1 as a mask. Thus, the frequency of the surface acoustic wave device deviated by the frequency by the lift-off method is corrected into the design value. Then plural surface acoustic wave devices (in this case, one) are cut off to complete the surface acoustic wave device from the wafer based on the dicing line. Thus, the frequency characteristic of the surface acoustic wave device using Li2B4O7 as the piezoelectric substrate is adjusted minutely.
申请公布号 JPS63160409(A) 申请公布日期 1988.07.04
申请号 JP19860306508 申请日期 1986.12.24
申请人 TOSHIBA CORP 发明人 NAMITA TOSHIHIRO;KAMATA HISAKO
分类号 H03H3/08;H03H3/10;H03K3/08 主分类号 H03H3/08
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