摘要 |
A dielectric substrate is conditioned for plating from an electroless metal plating bath by providing the surface or surfaces of the substrate that are to be plated with semiconductor material whereby the semiconductor material, in the case of n-type material, exhibits energy band where the valence band is equal to or higher than and, in the case of p-type material, exhibits energy band where the valence band is equal to or lower than the redox potential of the metallic ions in the electroless plating bath that are to be deposited as metal on the substrate. |