发明名称 STATIC TYPE MEMORY
摘要 PURPOSE:To expand the input fluctuation permissible range guaranteeing the excellent operation of a CMOS current mirror sense amplifier by inserting a transmission FET between the source of a driving FET and a current limiting FET. CONSTITUTION:The transmission gate elements TG1, TG2 are inserted between sources of drive elements DV1, DV2 and the current limit element LM. In selecting the transmission gates TG1, TG2 of a sense amplifier driving section SD1, the TG1, TG2 of other SD2... are not selected and only the SD1 is operative. Finally, current mirror FETLD1, LD2, elements DV1, DV2, TV1, TV2 and LM are connected between power supplies VDD, VSS, they are nearly the same as each drain voltage of the sense amplifier of a basic constitution. Since the sense sensitivity is improved when the potential difference of the drains between the driving element DV and the current limit element LM, the input fluctuation permissible range guaranteeing the excellent sense of the CMOS current mirror sense amplifier through the constitution above is expanded.
申请公布号 JPS63160088(A) 申请公布日期 1988.07.02
申请号 JP19860306305 申请日期 1986.12.24
申请人 TOSHIBA CORP 发明人 TSUJIMOTO JUNICHI;MATSUI MASAKI;OTANI TAKAYUKI
分类号 G11C11/419;G11C11/34 主分类号 G11C11/419
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