发明名称 METHOD FOR MEASURING GAP BETWEEN MASK AND WAFER
摘要 PURPOSE:To measure a gap during exposure by providing a linear Fresnel zone plate (LFZP) whose focal length is varied continuously on a mask and scanning laser light on it. CONSTITUTION:The continuously variable LFZP 2 whose focal length is varied continuously is provided on a mask 1 and a diffraction grating 4 is provided on a wafer 3 facing the mask 1. Then, a parallel laser beam 5 is scanned on the LFZP 2 and reflected and diffracted light from the grating 4 is detected. At this time, the beam 5 incident on the LFZP 2 is diffracted and converged by the LFZP 2, reflected and diffracted by the grating 4, and returned to the LFZP 2. Then when the focal length of the LFZP 2 on which the beam 5 is incident becomes equal to the gap quantity between the mask 1 and wafer 3, the beam 5 passed through the LFZP 2 is rechanged into a parallel beam and the output of a detector becomes maximum. The gap quantity between the mask 1 and wafer 3 is measured from the incidence position of the beam 5 where the output of the detector becomes maximum.
申请公布号 JPS63159704(A) 申请公布日期 1988.07.02
申请号 JP19860314893 申请日期 1986.12.23
申请人 NEC CORP 发明人 KONO HIDEKAZU;TANAKA RYOJI
分类号 G01B11/14;G03F9/00;H01L21/027;H01L21/68 主分类号 G01B11/14
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