| 摘要 |
PURPOSE:To manufacture an AlN thick-film resistor forming substrate, in which the generation of cracks is inhibited, by using an undercoating layer having a specific thermal expansion coefficient as the overlapping sections of a conductor and a resistor on the aluminum nitride substrate. CONSTITUTION:An AlN substrate containing Y2O3 such as 3 wt. % one is oxidized and treated under the conditions of 1250 deg.C and 1hr in atmospheric air, and insulator paste having a thermal expansion coefficient of 4.5-5X10<-6>/ deg.C is printed onto the acquired AlN substrate in a pattern such as a 325 mesh one, left as it is at normal temperature and dried, and constituted under the conditions of 850 deg.C and 10min, thus obtaining an undercoating layer 2. Likewise, a conductor layer 3 consisting of Ag-Pd group conductor paste containing Pt, Si, Pb, Cu, Al, etc., a resistor layer 4 composed of resistance paste including a substance such as Bi2Ru2O7 and glass paste made up of a PbO-SiO2-B2O2 group are left as they are at normal temperature and dried, and the substrate is shaped through overcoating 5 acquired by the profile of the conditions of 700 deg.C and 10min.
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