| 摘要 |
PURPOSE:To conduct operation at high speed by changing the bias state of a p-n junction in a unijunction-transistor including a thin-film semiconductor layer having quantum well structure in an emitter region by trigger beams, switching the state to a conductive state from a nonconductive state and generating the breaching of exaction absorption. CONSTITUTION:A semiconductor optical memory has a unijunction-transistor having first and second base electrodes, 11, 12 and an emitter electrode 13 consisting of a metallic layer formed to an emitter region 14, a bias-voltage supply means giving each of the emitter electrode 13 and the first base electrode 11 and the second base electrode 12 predetermined potential VE, VB and GND and biassing the unijunction-transistor to the state of high impedance, and a trigger-beam applying means lowering the potential of a base region just under the emitter region 14 and bringing the unijunction-transistor to a conductive state. Accordingly, the base region in the unijunction-transistor biassed under a high resistance state is irradiated with trigger beams, and switched to the conductive state, thus acquiring the semiconductor optical memory, which has small light intensity and can be operated at high speed. |
