| 摘要 |
PURPOSE:To reduce the dispersion of overlapping capacitance by forming source- drain regions in a self-alignment manner with a gate electrode by an insulating film approximately of the same shape as the gate electrode. CONSTITUTION:Chromium is evaporated onto a glass substrate serving as an insulating substrate 1 and is patterned into a gate electrode 2. SiN as a gate insulating film 3, amorphous silicon 4 and SiOx 5 as an insulating film are shaped; then, a photo-resist 6 is applied, and ultraviolet beams 7 are applied from the glass substrate side to sensitize the photo-resist 6. The photo-resist is patterned, the insulating film 5 is etched, and impurity atoms 9 are introduced into amorphous silicon, using the photo-resist or the insulating film 5 as a mask. Chromium is evaporated as metals 11 for source-drain electrodes, and the source- drain electrodes 11 are patterned, thus removing the metals for the unnecessary source-drain electrodes, and then insularly etching amorphous silicon. |
