MANUFACTURE OF INSULATOR THIN FILM

摘要

PURPOSE:To prevent a titanium oxide film from being cracked even if a thickness thereof exceeds 5000 Angstrom , by forming a silicon nitride film on a compound semiconductor and then forming the titanium oxide film on the silicon nitride film. CONSTITUTION:A thin film of silicon nitride 2 is deposited to a thickness of about 1000 Angstrom on an n-InP substrate 1 by means of the plasma CVD process. Then, a thin film of titanium oxide 3 is deposited on the silicon nitride film 2. The deposition of the titanium oxide film is performed by high-frequency sputtering. Using titanium as a target, exhaust oxygen is introduced into a high vacuum and the deposition is performed under a pressure of 1 Pa with the substrate temperature held at 100 deg.C. No crack occurs in the film even if a thickness thereof exceeds 5000 Angstrom . Further, the film thus deposited presents high adhesivity.