| 摘要 |
PURPOSE:To lengthen the lifetime of carriers by alternately laminating thin n-type semiconductor layers and p-type semiconductor layers corresponding to approximately the de Broglie wavelength of carriers onto a semiconductor substrate in multilayers and forming a channel for transferring charges. CONSTITUTION:p-type GaAs layers 122 and n-type GaAs layers 13 each having layer thickness of 115Angstrom are laminated alternately onto a semiinsulating GaAs substrate 11 at 110 periods; both carrier concentration of the p-type GaAs layer 12 and the n-type GaAs layer 13 are brought to 5X10<16>cm<-3>. The intervals of Schottky opaque electrodes 14 consisting of Ti-Au and semitransparent electrodes 15 using thin semitransparent Ti are brought to 2mum, and charges are transferred by a three-phase clock oscillator. A p-type region 16 and an n-type region 17 are formed through ion implantation. Consequently, electrons and holes are isolated spatially in a multilayer structure in which thin n-type and p-type semiconductor layers which show a quantum effect approximately in de Broglie liquid length are laminated interchangeably, and the radiative recombination time can be lengthened. Accordingly, charges can be transferred even when a direct transition type semiconductor is used.
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