| 摘要 |
PURPOSE:To form a resistor having a desired resistance value in a wafer surface with excellent uniformity, and to manufacture an integrated circuit with superior yield by a method wherein a region having desired layer resistance is shaped previously to a semiconductor substrate selectively, an insulating film is formed onto the region, an epitaxial growth layer is shaped onto the whole surface and a resistance element is manufactured. CONSTITUTION:Si<+> ions are implanted into a predetermined resistance forming region A, a resist is removed, and an N-type region 5 is formed through heat treatment in an AsH3 atmosphere. An SiO2 film 6 is shaped to sections except a single-crystal epitaxial layer forming region B in thickness such as 2000Angstrom . When GaAs layers 7a, 7b in thickness such as 5000Angstrom and N-type AlGaAs layers 8a, 8b in thickness such as 600Angstrom are grown by using a molecular beam epitaxy method, growth films (7b and 8b) on the SiO2 film 6 are changed into a polycrystal and display extremely high resistance, and are brought to semi- insulating properties, and growth films (7a and 8a) on the GaAs substrate 1 are turned into a single crystal. Contact holes 9 are bored to the growth films on the SiO2 film and the SiO2 film 6, and ohmic electrodes 10 and 12 and a gate electrode 11 are formed.
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