发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To improve the sensitivity, the resolution and the stability of a resist material by using a specific fluorine contg. itaconic acid ester polymer as the resist material. CONSTITUTION:The fluorine contg. itaconic acid ester shown by formula I is used as the resist material. In the formula, A is a structural unit derivated from a monomer having a double bond capable of copolymerizing, R1 is 1-5 C a fluorine substd. alkyl group, R2 is hydrogen atom or a fluorine substd. alkyl group same as that of R1 group, (m) is a positive integer, (n) is 0 or a positive integer, (n/m) is 0-99. Thus, the decomposition reaction of the main chain of the polymer contd. in the resist material is liable to occur by irradiating an electron beam or a X ray, and the solubility of the radiated part is remarkably improved than that of the unradiated part. As said polymer contains >=2 carbonyl groups in the molecule of the polymer, and contains the fluorine atom, the decomposition reaction of the polymer easily occur, thereby increasing the sensitivity of the resist material.
申请公布号 JPS63158541(A) 申请公布日期 1988.07.01
申请号 JP19860305405 申请日期 1986.12.23
申请人 TOSOH CORP 发明人 TSUTSUMI YOSHITAKA;KIYOTA TORU
分类号 G03F7/039 主分类号 G03F7/039
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