| 摘要 |
PURPOSE:To simplify a manufacturing process, to shorten the length of a wiring and to improve the degree of integration by implanting ions so as to give a desired resistance value to the desired positions of the wiring section by using FIB (focussed-ion-beams). CONSTITUTION:The resistance values of the desired sections 3, 4 of simultaneously formed polysilicon wirings 1a, 1b are made to differ by employing FIB and changing the quantity of the ion beams. The polysilicon wirings having different resistance values can be shaped during the same process or in the same chamber in a mask-less manner, thus simplifying a manufacturing process. The length of the wirings can be shortened, thus improving the degree of integration, then enhancing the reliability of a device.
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