| 摘要 |
PURPOSE:To obtain an etching side surface having excellent perpendicularity, flatness and smoothness by selectively forming an etching mask onto a semiconductor laser wafer and etching an etching surface exposed through vapor phase etching of the semiconductor laser wafer through liquid phase etching. CONSTITUTION:Ti is evaporated as an etching mask onto a semiconductor laser wafer having double-hetero structure, in which InGaAsP 2 and P-InP 3 are liquid-grown onto an N-InP substrate 1 in succession. The mask is patterned through a lift-off method, the selective etching of Ti or the like. A flow is generated on an etching side surface by vapor phase etching through a reactive ion etching method using Br2 gas so as to reach the N-InP substrate 1, and a side surface 5 having irregularities is shaped. The etching side surface 5 is changed into a flat and smooth side surface 6 by liquid phase etching by employing the mixed liquid of HBr:CH3COOH:K2Cr2O7 aqueous solution=1:1:1. Accordingly, the vertical, flat and smooth etching side surface is acquired easily thus obtaining an excellent resonator.
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