| 摘要 |
PURPOSE:To manufacture a photosensitive body sensitized in the long wavelength region at low cost by forming an amorphous silicon layer containing microcrystalline Si in a photoconductive layer. CONSTITUTION:The photosensitive body is obtained by successively laminating on a substrate (1) a p-type or n-type amorphous silicon (a-Si:H) layer, an a-Si:H (intrinsic) layer, an a-Si:H (muc-Si) layer containing microcrystalline Si, and an a-Si:H (intrinsic) layer, and a surface protective layer. The muc-Si layer is obtained by applying high discharge power to gaseous hydrogen-diluted silane (SiH4/H2), and the muc-Si layer having a specified optical band gap is formed by adjusting a hydrogen dilution ratio at the time of film forming, thus permitting the obtained photosensitive body to be lowered in the half-decay exposure in the long wavelength region and enhanced in photosensitivity with a low cost. |
