发明名称 |
REAL-TIME VOLTAGE CONTROL CIRCUIT FOR LSI MEMORY TESTER |
摘要 |
PURPOSE:To suppress the occurrence of the breakdown accident of an element to be inspected by using data stored in a voltage memory like a subroutine. CONSTITUTION:A CPU inputs voltage data and its address 1 to a voltage data memory 3 prior before a test is conducted because of a special program. Further, a test pattern generator inputs an address 1 which specifies the storage location of voltage data to be applied to the input terminal of the element to the inspected to the memory 3 as a test program advances during the test. Then the memory 3 outputs applied voltage data 4 to be supplied to pin electronics for respective input terminals from the memory 3 with the address 2. This data 4 is converted by a D/A converter 5 into an analog value, and a drive which supplies an input voltage directly to the respective input terminals is formed by a buffer amplifier 6. Thus, the rising and falling of a source voltage which are too steep are controlled property to suppress the occurrent of the breakdown accident of the element to be inspected.
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申请公布号 |
JPS63157071(A) |
申请公布日期 |
1988.06.30 |
申请号 |
JP19860302858 |
申请日期 |
1986.12.20 |
申请人 |
HITACHI ELECTRONICS ENG CO LTD |
发明人 |
MOCHIZUKI MASAAKI;FUSE MASAHITO |
分类号 |
H01L21/66;G01R31/28;G11C29/00;G11C29/56 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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