发明名称 REAL-TIME VOLTAGE CONTROL CIRCUIT FOR LSI MEMORY TESTER
摘要 PURPOSE:To suppress the occurrence of the breakdown accident of an element to be inspected by using data stored in a voltage memory like a subroutine. CONSTITUTION:A CPU inputs voltage data and its address 1 to a voltage data memory 3 prior before a test is conducted because of a special program. Further, a test pattern generator inputs an address 1 which specifies the storage location of voltage data to be applied to the input terminal of the element to the inspected to the memory 3 as a test program advances during the test. Then the memory 3 outputs applied voltage data 4 to be supplied to pin electronics for respective input terminals from the memory 3 with the address 2. This data 4 is converted by a D/A converter 5 into an analog value, and a drive which supplies an input voltage directly to the respective input terminals is formed by a buffer amplifier 6. Thus, the rising and falling of a source voltage which are too steep are controlled property to suppress the occurrent of the breakdown accident of the element to be inspected.
申请公布号 JPS63157071(A) 申请公布日期 1988.06.30
申请号 JP19860302858 申请日期 1986.12.20
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 MOCHIZUKI MASAAKI;FUSE MASAHITO
分类号 H01L21/66;G01R31/28;G11C29/00;G11C29/56 主分类号 H01L21/66
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