| 发明名称 |
A METHOD OF ETCHING REFRACTORY METAL FILM ON SEMICONDUCTOR STRUCTURES |
| 摘要 |
A method is disclosed of etching a refractory metal layer on a semiconductor structure comprising subjecting it to a mixture of a Lewis base and an oxidizing agent. In the preferred embodiment a method is described for etching a tungsten-titanium layer on a semiconductor structure by immersing it in a mixture of triethylamine and hydrogen peroxide. |
| 申请公布号 |
DE3471549(D1) |
申请公布日期 |
1988.06.30 |
| 申请号 |
DE19843471549 |
申请日期 |
1984.06.06 |
| 申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
RADIGAN, KENNETH J.;CLEEVES, JAMES M. |
| 分类号 |
C23F1/10;H01L21/027;H01L21/28;H01L21/308;H01L21/3213;(IPC1-7):H01L21/31 |
主分类号 |
C23F1/10 |
| 代理机构 |
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