| 摘要 |
PURPOSE:To contrive reduction in a leak current by a method wherein, in the semiconductor device on which a transistor and a diode are formed on a semiconductor substrate, the anode region of the diode is formed deeper than the base region of the transistor. CONSTITUTION:An N<+> type impurity region 11 is formed on the rear of an N-type semiconductor substrate. Then, a P-type region 23 is formed on the surface of an N-type region 12 as the anode region of a diode D. Then, the P-type regions 131 and 132, which become the base region of transistors TR1 and TR2, are formed on the surface of the region 12. Subsequently, N<+> regions 141 and 142 are formed on the surface regions of the 131 and 132 respectively as an emitter region. Then, an N<+> type region 15 is formed on the surface region of the region 132 separated from the region 142 as the cathode region of the diode D. According to this constitution, as the diffusion depth of the region 23, corresponded to the base of the N-P-N type TR2 which will be formed parasitically on the diode D part, is set sufficiently deep, the base width of said TR2 becomes wider, the current amplification factor hFE can be made small, and as a result, a leak current can be reduced. |
