| 摘要 |
PURPOSE:To perform selective oxidation after a side wall is eliminated, and prevent offset generating between the side wall and a region for forming semiconductor elements, by doping impurity into a semiconductor substrate under the condition where a side wall is formed on the side surface of a non-oxidizable film, and forming a channel stopper. CONSTITUTION:An oxide film 2 is formed by heating the surface of a semiconductor substrate 1. A nitride film 3 is formed on the oxide film #. A silicon oxide film 4 is formed on the film 3. On the oxide film 4, a resist film 5 is selectively formed, and the oxide film 4, the film 3 and the oxide film 2 are eliminated by applying the film A to a mask. Thus a region of the substrate 1 which serves as a field is exposed. After that, the film 5 is eliminated, and a silicon oxide film 6 is formed on the oxide film 4. A side wall 7 composed of the film 6 is formed on the side surface of the film 3. Further, a channel stopper 8 is formed by applying the oxide films 2 and 4, and the wall 7 to masks and implanting impurity ions into the substrate 1.
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