| 摘要 |
PURPOSE:To constitute a two-layer structure of a silicon oxide film layer and an organic silicon thin film layer, and obtain a semiconductor element with highly insulative property by a simple process, by a method wherein a substrate is exposed in oxygen plasma, and the organic functional group of an organic silicon thin film is removed, after a liquid containing organic silicon is spread on a semiconductor substrate having unevenness on the surface and a heat treatment is performed. CONSTITUTION:After a field oxide film 2 is formed on a semiconductor substrate 1, a gate oxide film 3 and a polysilicon gate 4 are formed in order, and a diffusion layer 5 is formed in a source.drain region by an ion implantation method. After a first interlayer insulating film 6 is formed, contact holes 7 are formed by anisotropic etching. On the holes 7, an aluminum wiring with specified thickness is formed, and thereon, a second interlayer insulating film 9 with specified thickness is formed. A liquid containing organic silicon is spread, which is made an organic silicon thin film 10 by thermal treatment. Then the substrate 1 is exposed to oxygen plasma, and a two-layer structure of the thin film 10 and a silicon oxide film 11 is obtained.
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