| 摘要 |
PURPOSE:To obtain a semiconductor device having excellent insulation property of gate oxide film by providing an Si layer by the selective epitaxial growth method so that it is in contact with a first Si substrate exposed from an opening and thereby automatically removing natural oxide film. CONSTITUTION:An element region and inter-element separating region are formed on a P-type Si substrate 40, a gate oxide film 41 is then provided, a poly-Si film 42 is then deposited thereon, and a contact hole 43 is opened to the film 42 and film 41 using the photolithography technology. Here, natural oxide film 46 is generated and an P-doped Si film 44 is grown by the selective epitaxial SEG technique. Thereby, an N<+> diffused layer 45 is formed by phosphorus (P) under the hole 43. Moreover, P doping is carried out to the film 42. Thereafter, the films 44 and 42 are patterned and ordinary poly-Si gate MOS treatment is carried out. Here, the films 44 and 42 and oxide film are selectively removed and a wiring layer 47 is obtained. The substrate surface and film 42 are connected but the film 46 is automatically removed by the selective epitaxial growth technique.
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