| 摘要 |
PURPOSE:To manufacture the fine P channel MOSFET by forming a gate electrode in narrow width with shallow source-drain junction by means of heat treating a Ga containing layer at low temperature for a short time. CONSTITUTION:An N type Si substrate 10 is subjected to dielectric isolation 13 to provide an oxide film 11 and a poly Si gate electrode 12 and when Ga ion in mass larger than that of B is implanted, the range xj 1 is short. Then, overall surface is covered with an SiO2 17 and then windows 19 are made by etching the SiO2 17 using a resist mask 18. Next, Ga is activated by heat treatment at 500-700 deg.C for 5 minutes or less to form Al electrodes 20 on P<+> layers 15a, 16a. Through these procedures, the source-drain layers 15a, 16a are hardly diffused into the substrate 10 due to said heat treatment for a short time at low temperature so that the reduction L' in channel width may be minimized to reduce the gate electrode width resultantly enabling fine FET to be manufactured.
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