| 摘要 |
PURPOSE:To decrease th energy necessary to rotate a heater cover and reduce the energy cost, by arranging the heater cover on a part or the whole part of the circumference of a sample stage, via a slight up, and constituting the heater cover of silicon carbide. CONSTITUTION:A wafer 6 is mounted on a disc type wafer sample stage 4 in the inside of a reaction furnace 1 of a vapor phase reaction equipment, and a heating means 10 having a heater is arranged just under the sample stage 4 via a slight gap. A heater cover 7 made of silicon carbide (SiC) is arranged on a part or the whole part of the circumference of the sample stage 4 via a slight gap. The sample stage 4 containing the heater cover 7 is arranged on a turn table 5, which is rotated in the inner bell jar 15 of the reaction furnace 1. An ordinary pressure type CVD reaction furnace of planetary system is applied to the reaction furnace 1, and the heater cover is made of silicon carbide. Thereby, the temperature distribution is made uniform, the corrosion resistance is improved, the lightweight is realized, and the energy necessary for rotation is reduced.
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