| 摘要 |
PURPOSE:To contrive to reduce reactive currents, and to lower a threshold current value and lengthen life by making the width of a light guide layer larger than that of an active layer, forming a current block layer to the active layer and controlling the position of the interface between the active layer and the current block layer. CONSTITUTION:A light guide layer 3 exists up to laser-beam reflecting end surfaces, and the end surfaces of an active layer 4 are positioned on the insides more than the reflecting end surfaces. A mesa stripe is formed in the direction that the shape of a section takes a trapezoid through mesa etching, and only a P-Ga0.8Al0.2As cap layer 6, a P-Ga0.55Al0.45As clad layer 5 and the active layer 4 in the vicinity of the end surfaces are removed through etching. The outside of the mesa stripe is buried through a buried growth method. The side surfaces of the active layer 4 are buried with current block layers (P-Ga0.55Al0.45As layers) 7 even in a section in the direction of a laser optical axis at that time. Accordingly, threshold currents are reduced, and a visible semiconductor laser device of the maximum optical output of 1W is obtained. Since currents flowing near the laser-beam reflecting end surfaces can also be lowered, the damage of the end surfaces due to heat is reduced, and reliability is improved, too. |
