| 摘要 |
PURPOSE:To suppress the leakage of light, which is generated in a wall layer in a resonating quantum well, by providing the resonating quantum well comprising AlGaAs/GaAs/AlGaAs in contact with an emitter layer, and providing a base layer comprising InAlGaAsP facing the emitter layer by way of the resonating quantum well. CONSTITUTION:A resonating quantum well 5 comprising layers of AlGaAs/GaAs/AlGaAs is provided in contact with an N-type AlGaAs emitter layer 6. A P<+> type InAlGaAsP base layer 13 comprising InAlGaAsP is provided in contact with an AlGaAs barrier layer 5A of AlGaAs in the resonating quantum well 5. The refractive index of the base layer 13, which is formed in contact with the barrier layer 5A, is the same as or lower than that of the AlGaAs and lower than the well layer of GaAs. Therefore, light generating in the well layer can be sufficiently confined.
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