| 摘要 |
PURPOSE:To enable a wafer to be etched uniformly all over the top and bottom faces thereof in a wafer etching apparatus, by injecting chemical solution to the top and bottom faces of the wafer while levitating the wafer by jet for supplying the solution all over the top and bottom faces of the wafer. CONSTITUTION:A wafer 1 is transported through a levitation path in which N2 gas is supplied in jet and introduced into a wafer etching apparatus 10. In the apparatus 10, the wafer 1 is disposed between the lower and upper injection sections 11 and 12 provided with showers 23 and 24, respectively. The wafer is levitated from the lower injection section 11 by the shower 23. Shower 28 is applied uniformly to the top face 1a of the wafer 1 and chemical solution 17 is caused to flow over the top face 1a and the bottom face 1b quickly and uniformly and supplied all over the surfaces uniformly. Thereby, both the top and bottom faces 1a, 1b of the wafer 1 can be etched uniformly both in the radial and peripheral directions, while no mechanical defects 6 is created on the surfaces.
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