| 摘要 |
PURPOSE:To compensate for a hole traps at an interface and to decrease a PPC effect, by performing atomic planar doping before forming an eptaxial growth layer having a heterostructure. CONSTITUTION:A semi-insulating GaAs substrate 11 undergoes pre-treament as the similar way before ordinary MBE growing, and the substrate is set in an MBE apparatus. An As beam is projected at a growing temperature of about 500-600 deg.C. Under this state Be is projected by about 10<11>-5 x 10<12> cm<-2>, and atomic planar doping is performed. Then the De beam is cut OFF, and a GaAs layer 13, an N-AlGaAs layer 14 and a GaAs layer 15 are epitaxially grown. Thus a selectively doped GaAs/N-AlGaAs heterostructure is formed. Thereafter, an HEMT is formed on the epitaxially grown layers by an ordinary method. In the HlMT having this structure, a component, which does not depend on the ANAS mol ratio of the PPC effect can be largely decreased.
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