| 摘要 |
PURPOSE:To form a bubble memory of 8-16M bit recording capacity by specifying x, y, z values showing a composition ratio of a molecular formula in a magnetic film to be epitaxially grown on a Ga3Gd5O12 single crystal substrate. CONSTITUTION:In a magnetic film to be expressed by a molecular formula: Ya-x-y-z SmxLuy Caz Fe5-z Gez O12 and to be epitaxially grown on a Ga3 Gd5 O12 single crystal substrate, the value of x, y, z showing a composition ratio of a molecular formula is 0.78<=x<=0.92, 1.48<=y<=1.68, 0.53<=z<=0.65. And, on condition that lattice constants are made completely accorded with GGG, a bubble diameter 0.8-1mum can be stably secured by examining the composition ratio of Lu and Sm with prepared judging conditions. In this way, a mixture of lead oxide Pbo and boron oxide B2 O3 is used as a solvent to perform epitaxial growth to obtain a a magnetic garnet film having desired magnetic domain width.
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